Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...

Abstract: In this invited paper, we demonstrate that the contact interface resistance is a major bottleneck for advanced FinFET performance scaling (38% of the external resistance at 45nm gate pitch).

Family vacations are thrilling as they bring in new places, stunning views, and memories that count. Nevertheless, every ...

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The module delivers up to 400 W — 200 W per output — within a 2.5-inch footprint. The company says the addition allows engineers to configure as many as 16 isolated outputs from a single supply, ...

An advanced math course that parents and students have been clamoring for is on the verge of approval at the Palo Alto Unified School District, but the course must overcome opposition from leading ...

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